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Trench gate and thin wafer technology; Low collector to emitter saturation voltage; High speed switching; Low leak current.

IGBT drive circuit design:
IGBT drive function is to enable the IGBT module to work properly while protecting IGBT modules. IGBT drive circuit plays an important role in the whole IGBT system. IGBT is the core of the circuit components, it can be conducted under high pressure, and cutoff in the large current. In hard switching bridge type circuit, whether the power component IGBT can be accurate and reliable to use playing a vital role. The drive circuit is the PWM signal which outputs the control circuit to power amplification to meet the requirements of driving IGBT, and the design of the drive circuit is directly related to the safe and reliable use of IGBT. IGBT drive circuit for IGBT devices also provide gate over voltage, short circuit protection, over current protection, over temperature protection and Vce overvoltage protection (active clamp), gate under-voltage protection, didt protection (a short circuit overcurrent protection).

IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is composite full control voltage drive type power semiconductor devices composed of the BJT (Bipolar Transistor) and MOS (Insulated Gate field-effect tube), with both advantages of high input impedance of MOSFET and low conduction pressure drop GTR.

IGBT combines the advantages of the above two devices with low driving power and low saturation voltage. It is very suitable for the converter system with dc voltage of 600V and above, such as ac motor, frequency converter, switching power supply, lighting circuit, traction drive, etc.

RJP30H2A Specification:

Item Symbol Ratings Unit
CollectortoEmittervoltage VCES 360 V
GatetoEmittervoltage VGES ±30 V
Collectorcurrent Ic 35 A
Collectorpeakcurrent ic(peak)Note1 250 A
Collectordissipation PCNote2 60 W
Junctiontocasethermalimpedance oj-c 2.08 °C/W
Junctiontemperature Tj 150 °C
Storagetemperature Tstg –55to+150 °


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