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Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Rds On (Max) @ Id, Vgs 8 mOhm @ 62A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRF3205 IC Chips
Metal Oxide Semiconductor Field Effect Transistor, referred to as MOSFET is a kind of field-effect transistor that can be widely used in analog circuit and digital circuit. MOSFET can be divided into "n-type" and "p-type" according to the polarity of its "channel" (working carrier), commonly known as NMOSFET and PMOSFET, and other short names include NMOS, PMOS, etc.

Application advantages:
1. The field effect transistor is the voltage control element, while the bipolar junction transistor is the current control element. In the case that only the less current is allowed, the effect tube should be used; When the signal voltage is low and the current is allowed from the signal source, the bipolar transistor should be selected.
2. The source and drain of some field effectors can be used interchangeably. The grid voltage can also be positive and negative, and the flexibility is better than the bipolar transistor.
3. The field effect tube is a monopolar device that uses most carriers to conduct electricity, and the bipolar junction transistor is a majority carrier and conducts electricity with a small number of carriers.So it's called bipolar device.
4, Field effect tube works in the small current and low voltage conditions, and its manufacturing process can easily put a lot of field effect tube integrated on a silicon chip, so the field effect tube has been widely used in the large scale integrated circuit.

Here are some recent review of Utsource MOSFET IRF3205 IC Chips
review of Utsource MOSFET IRF3205 IC Chips
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