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Infineon Introduces The Second Generation Of ThinQ! SiC Schottky Diodes

Infineon Technologies Co., Ltd has recently launched the second generation of SiC Schottky diodes, packaged with the to-220 FullPAK. The new TO220 FullPak product series not only possesses the excellent electrical properties of the second generation ThinQ! SiC Schottky diodes, but also adopts the full isolation package with no isolation sleeve and isolation film, making the installation easier and more reliable.

Distinctly, the thermal resistance between the internal junction and the radiator of the new TO220 FullPAK device is similar to those of the standard non-isolated TO-220 device. The patented diffusion welding process greatly reduces the thermal resistance between the internal chip and the foot of the tube, effectively compensating for the heat dissipation of the internal insulation layer of the FullPAK. The rated current range of the 600 V FullPAK product series launched by Infineon is 2 A to 6 A, the most complete series of SiC diodes in such package.

Silicon carbide (SiC) is a revolutionary material suitable for power semiconductors with physical properties far more superior to those of silicon power devices. Its key features include benchmark switching performance, no reverse recovery current, little or no influence on switching behaviors and the standard operating temperature range from -55 °C to 175 °C. Main application fields of SiC Schottky diodes are switching power supply (SMPS) of the active power factor correction (PFC), and other AC/DC and DC/DC power conversion applications such as the solar inverter and motor drive. The FullPAK product series is particularly suitable for LCD/PDP and power applications in computers.

Availability and pricing
The whole series of products have been put into production. Their price is equivalent to the that of the same devices with the  TO220 package.
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